再次，該等方法及程序同樣適用於具有重複結構之其他工件。

圖16B為說明根據本發明之實施例利用光束輪廓反射量測及/或光束輪廓橢圓量測以判定半導體晶圓上之 ...TWI631314B-利用光學臨界尺寸(ocd)計量之結構分析用於光學參數模型之最佳化方法、非暫時性之機器可存取儲存媒體及用以產生所模擬繞射信號以利用光學計量判定用以在晶圓上製造結構之晶圓塗覆的程序參數之系統-GooglePatents利用光學臨界尺寸(ocd)計量之結構分析用於光學參數模型之最佳化方法、非暫時性之機器可存取儲存媒體及用以產生所模擬繞射信號以利用光學計量判定用以在晶圓上製造結構之晶圓塗覆的程序參數之系統DownloadPDFInfoPublicationnumberTWI631314BTWI631314BTW106107848ATW106107848ATWI631314BTWI631314BTWI631314BTWI631314BTW106107848ATW106107848ATW106107848ATW106107848ATW106107848ATW106107848ATWI631314BTWI631314BTWI631314BAuthorityTWTaiwanPriorartkeywordsopticallowlightresponseparameterPriorartdate2011-06-20ApplicationnumberTW106107848AOtherlanguagesEnglish(en)OtherversionsTW201719113A(zhInventorＧ佐拉陶德斯莊勇何班傑明蔡賓明劉學峰Ｊ漢琪約翰OriginalAssignee美商克萊譚克公司Prioritydate(Theprioritydateisanassumptionandisnotalegalconclusion.Googlehasnotperformedalegalanalysisandmakesnorepresentationastotheaccuracyofthedatelisted.)2011-06-20Filingdate2012-06-15Publicationdate2018-08-012011-06-20PrioritytoUS13/164,398priorityCriticalpatent/US9310296B2/en2011-06-20PrioritytoUS13/164,398priority2012-06-15Applicationfiledby美商克萊譚克公司filedCritical美商克萊譚克公司2017-06-01PublicationofTW201719113ApublicationCriticalpatent/TW201719113A/zh2018-08-01ApplicationgrantedgrantedCritical2018-08-01PublicationofTWI631314BpublicationCriticalpatent/TWI631314B/zhLinksEspacenetGlobalDossierDiscuss230000003287opticalEffects0.000titleclaimsabstractdescription194238000004458analyticalmethodMethods0.000titleclaimsabstractdescription32238000003860storageMethods0.000titleclaimsdescription27238000000034methodMethods0.000titleclaimsdescription24230000004044responseEffects0.000claimsabstractdescription90238000005457optimizationMethods0.000claimsabstractdescription35238000005259measurementMethods0.000claimsdescription57238000004519manufacturingprocessMethods0.000claimsdescription26239000011248coatingagentSubstances0.000claimsdescription6238000000576coatingmethodMethods0.000claimsdescription6238000004088simulationMethods0.000claimsdescription423000000